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Steep subthreshold-slope (SS) devices are attracting much interest because of their capability of reducing the power dissipation in digital ICs. However, the mechanism for obtaining a steep SS often interferes with the low on-resistance that is required for a high on-current. The introduction of a doped superlattice into the source was recently proposed as a solution to this problem. However, to our...
We successfully developed fabrication process of 16nm InGaAs channel multi gate MOSFETs with regrown source and drain by using MOVPE. This device showed 707 µA/µm of Id.max and 498 µS/µm of gm.max. On-off ratio was 103 @ Vd = 0.5V.
An insulated gate was introduced in hot electron transistors, in which hot electrons are propagated only in the intrinsic region after extraction from a heterostructure launcher. Voltage gain is increased by improved fabrication process.
The emitter width of the hot electron transistor controlled by an insulated gate was reduced to 70 nm by an improved fabrication process. In a previous study, the observed output conductance was twofold higher than transconductance. In this study, the output conductance was reduced from 115 mS/mm to 20 mS/mm by the improved fabrication process and a clear current modulation was also confirmed.
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