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The operation principles of the four-transistor (4-TR) pixel CMOS image sensor, fabricated by 0.18-mum technology, were investigated by pixel-level characterization utilizing a single-pixel test pattern. It was found that the pixel's dark current level is strongly influenced by the gate bias (VTX(on)) of the transfer (TX) transistor at a fixed supply voltage (VDD). The largest dark current occurred...
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