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The influence of forward current freewheeling time on the reverse recovery di/dt robustness of Superjunction (SJ) MOSFET body diode is investigated in detail. It is found that the maximum di/dt capability of body diode is improved dramatically with reducing the forward current freewheeling time. To explore this phenomenon, physical TCAD simulations and experiments have been carried out. It shows that...
This work provides a physical insight into the failure of Superjunction MOSFET (SJ-MOSFET) for full bridge inverter system during an reverse recovery behavior. The inspection of failed SJ-MOSFET reveals burnt-out points in the vicinity of the device edge termination. To explore this result, physical TCAD simulations have been carried out. It is found that there is an extremely inhomogeneous reverse...
This paper investigates the optimization of multiple tuned mass dampers (TMD's) to reduce vibrations of flexible structures described by partial differential equations, using the non-uniform SCOLE (NASA Spacecraft Control Laboratory Experiment) beam system with several dominant modes as an illustrative application. Here we focus on random excitations and use multiple groups of TMD's with each group...
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