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InxGa1-xN and InxAl1-xN alloys are grown via MBE on sapphire substrates. A hole concentration of 7.7×1017 cm−3 is achieved on Mg-doped In0.04Ga0.96N. When x≫0.11, the Hall samples exhibit strong n-type polarity, whereas p-type polarity is confirmed by hot probe measurement for all Mg-doped InGaN and InAlN samples. Single p-i-n junction solar cells made of the same InxGa1-xN alloy composition are developed...
The band gap energies of the In1−xAlxN alloys are continuously tunable across the solar spectrum, making them good candidates for high efficiency solar cells. In particular, multijunction solar cells could be fabricated entirely from different compositions of this one alloy system. From modeling experimental measurements of the optical absorption coefficient in alloys with 0 ≤ × ≤ 0.6, a band gap...
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