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We present the fabrication of nitrogen-vacancy (NV) spin chains by implantation through a silicon mask on diamond. A minimum implantation aperture width of 5 nm is produced. Super-resolution measurements reveal NV lines 26 nm wide and minimal NV-pitch of 8 nm.
A triangular nanobeam architecture for a bulk-diamond quantum photonic networks based on silicon masking and angular etching is proposed and implemented. Cavities with Q>3×103 are demonstrated. S-bent interconnects for realizing a mm-scale network are introduced.
Si has emerged as a promising material platform for solid-state quantum computation. Si/SiGe epitaxial technologies have enabled atomically smooth interfaces which lead to boosted two- dimensional electron mobility over conventional Si metal-oxide-semiconductor field-effect transistors (FETs). Enhancement-mode Si/SiGe heterostructures, which do not contain intentional dopants, provide electrons an...
Epitaxial growth of Cu nanorod films on hydrogen-terminated Si(1 0 0) substrates by oblique angle deposition (OAD) was investigated. It is found out that the crystallographic orientation of Cu nanorod films exhibits a 45° in-plane rotation with respect to the substrate. When the incident angle of deposition was increased from normal to 80°, the distribution of Cu(1 1 1) poles is observed to spread...
SiO2 anchored sulfonic acid catalyst was prepared and used in the nitration of toluene with N2O5. The effects of catalyst amount, reaction temperature, reaction time and reusability of catalyst on yield and selectivity for the nitration of toluene were investigated. Under optimum conditions, the conversion of toluene was 95%, and the ratio of o/p is 1.3.
Virtual endoscopy system are researched in this paper. We use boundary model and local feature structure to realize tissue segmentation. A new efficient algorithm is presented to solve path planning based on distance transform. As for real-time processing, a frame in virtual endoscopy is divided into near viewpoint part and far viewpoint part based on volume data characteristics in our method. In...
Both the simulation and experimental results confirm that there exist upper and lower limits of carrier concentration in the quantum well. The small difference between the upper and lower limits explains the narrow distribution of 2DEG density from all published experimental observations in strained Si. We report the lowest as-grown carrier density to date in Si/SiGe heterostructures
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