The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents a simulation based study of the impact of nanoscale bidirectional diode reverse saturation current, junction capacitance, and crossbar coupling capacitances on the read operation of nanoscale ReRAM devices in 1Diode 1ReRAM crossbar memory architectures. Our results show that the maximum achievable crossbar memory density is a strong function of the diode reverse saturation current,...
This paper presents a simulation-based study to understand the impact of coupling capacitance on the read operation of nanoscale RRAM devices in 1D1R crossbar memory architectures. Our simulation results show that the coupling capacitances can form additional sneak paths which can lead to RRAM HRS read failure. Increase in the coupling capacitance increases the transient charging current when an ultra-fast...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.