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Resistive random access memory (RRAM) is a promising candidate to substitute static random access memory (SRAM) in lookup table (LUT) design for its high density and non-volatility. RRAM cells are fabricated at backend CMOS process and have negligible area cost. However, the complex peripheral circuit design to satisfy performance and accuracy requirements becomes a major issue. In this work, we propose...
Look Up Table (LUT) is a basic configurable logic element in Field Programmable Gate Arrays (FPGAs). In a commercial product, Static Random Access Memory (SRAM) has been widely used in each LUT to store configured logic. Recently, emerging Resistive RAM (RRAM) has attracted a lot of attention for its high density and non-volatility. In this work, we explore a novel LUT design with bipolar RRAM devices...
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