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This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiNx/AlN/GaN MISHEMTs. The devices featured in situ grown SiNx by metal–organic chemical vapor deposition as a gate dielectric and for surface passivation. Selective source/drain regrowth was incorporated to reduce contact resistance. SiNx sidewall spacers and low-$\kappa $ benzocyclobutene polymer ($\kappa =2.65$ ...
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