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In this paper, through-silicon via (TSV) array in the form of one signal and four grounds (1S4G) are proposed to achieve high-frequency vertical connectivity for various three dimensional (3D) IC applications. Self-test method is developed to detect the conductor open and insulator short defects of TSV by capacitive and resistive measuring. Further a recovery mechanism for such a TSV array is introduced...
Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO2 memory devices with the sandwiched structure of Cu/ZrO2:Cu/Pt. The ratio between the high and low resistance is in the order of 106. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns, respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on...
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