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AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon (111) substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon (111) substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.
AIGaN/GaN high electron mobility transistors (HEMTs) are some of the most promising devices for power amplification. Important efforts have been taken to expand the operating frequency of these devices to mm-waves. As shown by Tasker et al., the drain parasitic resistance is one of the main factors limiting the current gain cut-off frequency (fT) and the power gain cut-off frequency (fmax) in high...
AlGaN/GaN heterostructure field effect transistors (HFETs) fabricated from maskless selectively grown mesas by ammonia molecular beam epitaxy on Si(111) substrates are demonstrated. With 0.8 mum gate length, the devices exhibited maximum drain current and trans- conductance of 425 niA/mm and 140 mS/mm, respectively. Values of fT and fMAX of 8 and 19 GHz, respectively, were obtained from RF measurements...
Self-heating in GaN HFETs is a consequence of the high power and current levels common in such devices, and the limited ability of the substrates to conduct heat away from the devices. Most high frequency test devices are usually composed of 2 separate devices, laid out in a parallel electrical configuration but spatially symmetric with shared gate and drain contacts. The self-heating at high current...
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