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Under continuous light illumination, it is known that localized domains with segregated halide compositions form in semiconducting mixed‐halide perovskites, thus severely limiting their optoelectronic applications due to the negative changes in bandgap energies and charge‐carrier characteristics. Here mixed‐halide perovskite CsPbBr1.2I1.8 nanocrystals are deposited onto an indium tin oxide substrate,...