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The high performance Ge pMOSFETs have been realized with ultrathin HfO2/AlOx/GeOx/Ge gate-stacks fabricated by ozone postoxidation (OPO) and NiGe metal source/drain (S/D). It is found that OPO yields a reduction of interface traps and an improvement of dielectric strength for the HfO2/AlOx/GeOx/Ge gate-stacks. On the other hand, it is also confirmed that the NiGe metal S/D structure decreases the...
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