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A 1D–2D hybrid complementary logic inverter comprising of ZnO nanowire and WSe2 nanosheet field‐effect transistors (FETs) is fabricated on glass, which shows excellent static and dynamic electrical performances with a voltage gain of ≈60, sub‐nanowatt power consumption, and at least 1 kHz inverting speed.
Dual-gate amorphous (a)-InGaZnO thin-film transistors (TFTs) are simply realized using the passivation layer of already fabricated bottom-gate TFTs as top-gate dielectric, so that an electrical biasing of either top or bottom gate may control the threshold behavior of the device. By applying a voltage to the top gate of a TFT that is serially connected to the next adjacent TFT, we could form a logic...
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