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MgxCd1−xTe (1.7 eV)/Si (1.1 eV) (x∼0.13) tandem cells have the potential to reach conversion efficiencies greater than 30% with low cost. Mg0.13Cd0.87Te/MgyCd1−yTe (y>0.13) double-heterostructures (DH) grown by molecular beam epitaxy feature 1.7 eV bandgaps and very high absorption coefficients measured by photoluminescence (PL) and ellipsometry. Both undoped and n-doped Mg0.13Cd0.87Te/MgyCd1−y...
CdTe/Mg0.46Cd0.54Te double heterostructures with n-type In doping concentrations, varied from 1 × 1016 to 7 × 1018 cm−3, have been grown on InSb substrates using molecular beam epitaxy. Secondary ion mass spectroscopy measurements show strong diffusion of In from the InSb substrate to the CdTe buffer layer, while the In concentration is constant in the CdTe layer between the two Mg 0.46Cd0.54Te barrier...
CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm−3 to 1×1018 cm−3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 µs for an unintentionally doped sample to sub-nanosecond...
This paper reports the growth of ZnTe/GaSbheterostructures on GaSb (001) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characterize the structural properties. Ellipsometryand photoluminescence (PL) are used to characterize the optical properties.
The spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using photoluminescence measurements. The quantum efficiency is inferred from the power law that links pump power and integrated photoluminescence signal.
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