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This chapter reviews the research on direct gap light emission and optical gain from Ge, including historical aspects, theoretical modeling, band‐engineeringapproaches, materials growth, spontaneous emission, and stimulated emission under opticaland electrical pumping. The demonstration of electrically pumped monolithicGe‐on‐Si lasers and the rapid progress in the experimental implementation of band‐engineering...
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n+ Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.
We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.
We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications.
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