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This paper examined the performance and bias stability of amorphous In–Ga–Zn–O (${a}$ -IGZO) thin-film transistors (TFTs) with a self-aligned coplanar structure. The activation energy barrier responsible for the positive bias thermal stress (PBTS)-induced instability of the ${a}$ -IGZO TFTs with low oxygen loadings can be attributed to the migration of cation interstitial defects. However, the IGZO...
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