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Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and applied. Ballistic injection from the contacts is shown to be of paramount importance as channels scale...
Ohm's law, a linear drift velocity response to the applied electric field, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In the high electric field, the collision-free ballistic transport is predicted, while in low electric field the transport remains...
The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate saturation velocity due to the presence of a finite electric field at the drain. The current–voltage characteristics...
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