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Transient charging and discharging of border traps in the dual-layer HfO2/SiO2 high-kappa gate stack have been extensively studied by the low-frequency charge pumping method with various input pulse waveforms. It has been demonstrated that the exchange of charge carriers mainly occurs through the direct tunneling between the Si conduction band states and border traps in the HfO2 high-kappa dielectric...
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