The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, the effect of silicon body thickness (TSi) and silicon body width (WSi) variation on DC characteristics in 100 nm gate length silicon-on-insulator (SOI) junctionless (JL) and junction transistors has been investigated by using numerical simulations. The digital figure-of-merits characteristics such as threshold voltage (VTH), on-current, subthreshold voltage, and drain-induced-barrier-lowering...
In this paper, the effect of gate workfunction variation on electron concentration at depletion and inversion as a function of applied gate voltage for 100 nm gate length silicon-on-insulator (SOI) junctionless (JLT) and junction (JT) transistors are investigated. It shows that the JLT device is properly function and achieving full-depletion without losing gate controllability at higher gate workfunction...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.