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Lithography is generally used when fabricating microstructures. If the substrate is conducting, it is possible to form high aspect ratio metallic microstructures by electroplating. However, it is difficult to fabricate high aspect ratio microstructures using just resist as the masking material because the high aspect ratio required is difficult to achieve with resist. On the other hand, of high aspect...
Chemical bonding states of doped impurities, boron (B) and arsenic (As), in silicon (Si) shallow junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation of the impurities, and to clarify depth profiles of concentration...
There is increasing demand for moving from batch immersion tools to single-wafer spin tools for silicon wafer cleaning, etching, and photoresist/residue removal in advanced semiconductor manufacturing. However, high-dose ion-implanted photoresist removal using a conventional single-wafer spin tool is very difficult. We have developed a novel single-wafer single-chamber dry and wet hybrid system in...
Chemical bonding states of boron (B) in shallow P+/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite...
A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained...
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