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Mission profiles for semiconductor applications are getting more and more challenging regarding electrical and thermo-mechanical robustness of metallization stacks. Effects, especially in thick metals, were investigated over the last years to find solutions for an improvement regarding both potential stressors. Some elements of a metallization were designed, investigated and simulated [1, 2, 3, 4...
The miniaturization process of CMOS components creates new challenges for the development of integrated circuits. Especially the connections with a tungsten via between two metal layers can be a problem. Changes in geometry can bear on reliability problems. For a robust metallization design it is necessary to know, how strong the influence of the tungsten via alignment affects the physical behavior...
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