The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Based on exact numerical calculations and physical analyses, we demonstrate that there are two types of flat band in two-dimensional (2D) magnetic photonic crystals (PhCs). One has trivial topology with zero Chern number and the other has non-trivial topology with nonzero Chern number. Physical origins and topological properties of two types of flat band are studied comparatively.
We extend Bour's work by taking the retardation effect of the incident plane wave into consideration. We find this effect is crucial in simulating surface-enhanced Raman optical activity (SEROA). According to our numerical calculation, ignoring this retardation effect results in the calculated SEROA intensities much weaker than those without the approximation.
Ge is an indirect band gap material. The band structure of Ge is a strong function of strain and alloy composition, and a transition from an indirect to a direct band gap has been observed for y∼6–10% for relaxed Ge1_ySny indicating the possibility of widespread applications of Ge-based photonic devices. The pseudomorphic nature of the Ge-based alloy layer on a substrate is important to keep dislocation...
Magnetic field induced martensitic transformation in Fe-Mn-Ga Heusler alloys has been discovered by W. Zhu et. al and T. Omori et. al respectively in 2009 [1, 2]. Thereafter, very few works concerned about this alloy, considering its great potential of giant shape memory strain, large exchange bias and magnetocaloric effect [3]. One obstacle is that the crystal structure transitions of this material...
Rare earth-cobalt based magnetic materials have attracted considerable attention due to their large anisotropy eld (HA), high saturation magnetizations (Ms), and high Curie temperatures (TC). As the first generation of rare earth-transition metal (RE-TM) based permanent magnet, SmCo5 possesses extraordinary high anisotropy led over 240 kOe, and nanocrystalline SmCo5 magnet bears coercivity as high...
We have studied the magnetic properties of alloy ribbons with various thicknesses of about 120 and 50 prepared by melt-spinning. Structural analyses based on an X-ray diffractometer and a high-resolution transmission electron microscope revealed an existence of nanocrystals with sizes of 10 20 nm surrounded...
Summary form only given. The thin detector foil of the widely used metal resistive-type bolometer is composed of an absorber, a substrate and two meander resistors. The two resistors on the detector foil together with other two identical ones coated on a reference foil form a Wheatstone bridge. Absorption of plasma radiation causes a temperature-induced resistivity increase of the detector foil, driving...
This paper explore the potential of a Metal Insulator Metal gate controlled tunneling Transistor (MIMT) as a high performance device immune to band-to-band tunneling, GIDL, and stochastic channel doping fluctuations. A semi-analytical model was developed and used to guide device optimization. It is shown that the best performance is obtained by increasing the ratio between the permittivity of the...
For the first time, we have demonstrated a 32 nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby leakage transistors and functional high-density SRAM with a cell size of 0.157 mum2. Record NMOS/PMOS drive currents of 1000/575 muA/mum, respectively, have been achieved at 1 nA/mum off-current and 1.1 V Vdd with a low cost process. With this high performance transistor,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.