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Exposing the feasible annealing temperature to the high-k dielectric after deposition as gate oxide is very important to increase the capability of dielectric against the leakage and the increase of high-k value. The study does not only focus on the quality of high-k dielectric, but the reliability concern. Using the voltage stress, the recovery of gate dielectric with tested samples under different...
The object of our research is to compare PSP and BSIM4 model parameters for MOSFETs before and after hot-carrier stress. The first part is using MBP software to extract the parameters of 65 nm node MOSFETs with and without hot-carriers stress. Then, comparison of MOSFET parameters based on PSP and BSIM4 models is executed. We conclude that the PSP model is more accurate than BSIM4 model.
A DSSS signal acquisition algorithm is proposed to improve the spectrum peak degradation and the Doppler frequency measurement precision. It first integrates the data weighted by hanning window, and then does the FFT analysis. Finally, it uses data points around the spectrum peak to determine a parabolic interpolation function, and then gets the position of the maximum point of the function to compute...
In this paper, the potentials of the current state-of-the-art electronics and packaging technologies for Venus missions is evaluated and intend to address the survivability and reliability of the selected technologies and develop design-for-reliability guidelines for mission integration.
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