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Rare earth element gadolinium-doped aluminum–zinc oxide (Gd–AZO) semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency (RF) sputtering at room temperature. Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure (OPP) during the RF sputtering process. Scanning electron microscope (SEM) and X-ray...
Various aluminum-doped zinc oxide (AZO) films were prepared on Si substrate by atomic layer deposition (ALD) at 100 °C. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investigated. The appearance of electrical resistivity shows their semiconducting properties. In most of the visible light band, all the AZO films...
The problem of base station (BS) planning for TD-LTE network is studied in this paper. This method takes various factors into consideration according to the public attitude. The public attitude plays an important role in the process of BS planning. We choose the area where the network performance is the worst to build BS, according to public attitude, Monte Carlo method and least cost path analysis...
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