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Cadmium telluride (CdTe) nanoparticles were deposited on amorphous glass and crystal quartz as nonconductive films, indium tin oxide and fluorine doped tin oxide as transparent conducting films, and silver as a metal at 100°C under pressure of 2 × 10−5 mbar. CdTe thin films prepared by a thickness about 80 nm. The results of x-ray diffraction analysis show the grain size of preferential orientation...
Electrical characterization of the p-Si/SiGe/Si(100) surface covered by organic molecule 9,10 Phenanthrenequinone (PQ), have been evaluated via analysis of hole gas transferred in the SiGe quantum well at low temperature. The enhancement in the density of two dimensional hole gas (2DHG) formed in the SiGe quantum well in the structure covered by PQ thin film is attributed to electrical passivation...
The pinning position of Fermi level and surface charge density at Si(100) surface of epitaxially grown p-Si/SiGe/Si structure has been evaluated via low temperature Hall experiment analysis. It is explained how the density of two-dimensional hole gas (2DHG) formed in the SiGe quantum well is affected by structural parameters, and proximity of Si surface charges and 2DHG. This approach is based on...
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