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Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact,...
We studied the effect of biaxial tensile and compressive strain on the electronic and optical properties using the density function theory. Electronic properties are investigated in terms of the electronic band structure and density of states. CdO monolayer exhibits a direct bandgap ∼ 1.35 eV using a modified Becke–Johnson approximation. The value of bandgap decreases under both biaxial tensile and...
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