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Recent advances in InAs quantum dot (QD) lasers epitaxially grown on on‐axis (001) silicon are reported. Fabry‐Perot QD lasers show a CW threshold current of 4.8 mA at 20 °C, extrapolated laser lifetimes more than 10 million hours when aged at 35 °C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ≈0.1. Ultra‐small microring QD lasers reveal a CW threshold of 0.5 mA and...
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