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Recent advances in InAs quantum dot (QD) lasers epitaxially grown on on‐axis (001) silicon are reported. Fabry‐Perot QD lasers show a CW threshold current of 4.8 mA at 20 °C, extrapolated laser lifetimes more than 10 million hours when aged at 35 °C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ≈0.1. Ultra‐small microring QD lasers reveal a CW threshold of 0.5 mA and...
We demonstrate the first electrically pumped quantum-dot micro-ring lasers epitaxially grown on (001) silicon. Continuous-wave lasing around 1.3 μm was achieved with ultra-low thresholds as small as 0.6 mA and maximum operation temperatures up to 100°.
InAlGaAs/InP p-i-n photodiodes epitaxially grown on silicon substrate with a dark current density as low as 1.3 mA/cm2 at −3 V are demonstrated. Responsivity, bandwidth, and output power at 1-dB compression are 0.76 A/W, 8 GHz, and −3.4 dBm, respectively.
We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60°C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum dots and as-cleaved facets.
After discussing the reliability issues limiting existing quantum well InP-based lasers, and the past reliability challenges of lasers grown on silicon substrates, we will show the recent reliability test results of a number of different types of quantum dot lasers grown on different silicon-substrate templates.
In this talk, we demonstrate the concept of a multi-functional metamorphic buffer (MFMB, Fig. 1(a)) layer that not only allows for growth of highly lattice-mismatched active regions on InP substrates, but also serves as a bottom cladding layer for optical confinement in a laser waveguide. Using the MFMB concept in conjunction with a strain-balanced multiple quantum well active region, we demonstrate...
We demonstrate 1.3 µm quantum dot lasers grown directly on (001) silicon substrates without offcut or germanium layers, with thresholds down to 30 mA and lasing up to 90°C. Measurements of relative intensity noise versus feedback show 20 dB higher tolerance to reflections compared to quantum well lasers on silicon.
A systematic study on the effect of molecular beam epitaxy (MBE) growth parameters on lattice-matched AlGalnP solar cells on GaAs is presented. MBE has been used to grow the highest efficiency, lattice-matched triple-junction (3J) solar cells to date, and expanding the range of available bandgap energies for the top cell will be an important step towards future 5–6J devices. In this work, we describe...
The characteristics of GaAs solar cells after 200 hours of annealing at 400–450 °C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90% are observed both before and after. At an operating temperature of 400 °C, the performance of annealed cells was only slightly worse than cells that had not undergone...
Epitaxially grown III–V compound semiconductors, such as gallium arsenide (GaAs), can provide superior photovoltaic (PV) performance due to many attractive material properties. However, the high cost of growing device-quality epitaxial materials has prevented their widespread adoption in terrestrial applications. In this regard, decreasing thicknesses of constituent epitaxial materials without compromising...
The radio propagation characteristics of 28 GHz were investigated by using a FMCW (Frequency Modulated Continuous Wave) radar system in a reverberation chamber for the small-fading of Rayleigh and Rician conditions.
InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 μm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP...
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