The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A giant piezoresistive coefficient is, for the first time, experimentally measured for n-type nanothick silicon. Compared to n-type bulk silicon, the nanothick silicon resistors exhibit at least one order of magnitude higher piezoresistive coefficient. Based on 2-D quantum confinement effect, our theoretic calculation indicates that the piezoresistive sensitivity will decrease and approach to zero,...
A SiO2 quad-cantilever micro-sensor with a self-sensing piezoresistor integrated is developed for on-the-spot chemical detection. Four piezoresistors are integrated in four cantilevers and the sensing signal is outputted from a half-sensitive Wheatstone bridge. The new single-sided micromachining process features low-cost and high-yield. Modified with a novel self-assembled monolayer (SAM) on two...
The paper reports an ultra-thin silicon resonant cantilever sensor with a novel through-cantilever doped piezoresistive sensing element and a Lorentz-force resonance exciting element integrated. Torsion-mode resonance is used where shear-stress piezoresistance can be used for the 95 nm-thick silicon nano-cantilever. Thanks to the ultra-thin cantilever where surface sensing effect becomes dominant,...
Both n- and p-type nano-thick piezoresistors are fabricated on SOI (silicon on insulator) wafers using micro-fabrication processes. Giant piezoresistance is measured and theoretically explained for nano-thick silicon resistors. Compared to bulk silicon, one order of magnitude higher piezoresistive coefficients are, for the first time, tested with 13 nm-thick n-type and 9 nm p-type samples. Surpassing...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.