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We have studied the influence of electronic doping on the preferred lattice sites of implanted $${^{61}\text{Co}}$$ 61 Co , and the related stabilities against thermal annealing, in silicon. Using the $$\beta ^-$$ β - emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (near-BC)...
Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, $$n^+$$ n + and $$p^+$$ p + ) in the highly dilute regime. Three different lattice sites were identified by means of emission channeling experiments: ideal substitutional sites; sites displaced...
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