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Ultra-short breakdown in the bulk of transparent materials has been intensively investigated in the last years, especially in dielectrics [1]. Whereas three-dimensional (3D) femtosecond laser micromachining in dielectrics is highly advanced, it remains extremely challenging in narrow bandgap materials such as silicon (Si). Recent numerical and experimental investigations show that only an underdense...
Since the advent of waveguide writing in glasses with femtosecond lasers more than two decades ago [1], this three-dimensional (3D) refractive index engineering technique has increasingly evolved offering performances that are suitable for many applications (telecommunications, design of optical components, etc.). However, this method has no equivalent in silicon so far, representing a technological...
We report experimental results of three-dimensional (3D) modification inside intrinsic and doped silicon wafers using laser pulses with 1.55 µm wavelength and 3.5 ns pulse duration. Permanent modification in the form of lines is generated inside silicon by tightly focusing and continuously scanning the laser beam inside samples, without introducing surface damage. Cross sections of these lines are...
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