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Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier heterostructure on SiC substrate were fabricated. The 66-nm-long gate device shows a dc drain current density of 2.1 A/mm, a peak extrinsic transconductance of 548 mS/mm, and a record current gain cutoff frequency of 220 GHz for quaternary...
Due to its high electron density (> 1?? 1013 cm-2) and high electron mobility (> 1000 cm2/V.s), AIN/GaN high-electron mobility transistors (HEMTs) present themselves as attractive candidates for high power and high speed applications. In order to continue increasing their high frequency performance, gate length (Lg) needs to be scaled downed below 30 nm. For ultrascaled HEMTs, the barrier thickness...
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