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The systematic design process using numerical simulations of the novel gallium nitride (GaN) enhancement-mode vertical superjunction high electron mobility transistor (HEMT) with breakdown voltage (BV) in the range of 5–20 kV is presented. The GaN superjunction pillar structure in the drift region of the vertical HEMT is first optimized using a simpler GaN superjunction diode structure, and the optimum...
We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (Ron,sp) of 4 mΩ-cm2 and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional...
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