The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The paper presents the design of an integrated circuit (IC) for a 10MHz low power-loss driver for GaN HFETs. While the main elements of the topology were introduced in a previous work, here the authors focus on the design of the IC and present preliminary results and considerations. The driver circuit proposed, based upon new two-stage positive-to-negative level shifters and resonant topology, has...
This paper presents a novel approach to achieving BPS functionality using AIGaN/GaN HFETs and for the first time presents experimental data showing the power bidirectional capability of the devices. We present the first detailed study of the bidirectional power switching capability of single and dual gate AIGaN/GaN BPS. One approach to achieve a symmetrical voltage blocking capability in AIGaN/GaN...
The rapid development of the research on gallium nitride semiconductor material and the unique properties of GaN (such as high electron mobility and saturation velocity, high sheet carrier concentration at hetero-junction interfaces, high breakdown voltages, and low thermal- impedance) make the material promising in high-power, high-temperature applications. Accordingly, a design for a drive circuit...
In spite of the almost ideal variation of the radiative current of 1.3 mum GaAsSb/GaAs-based lasers, the threshold current, Jth, is high due to non-radiative recombination accounting for 90% Jth near room temperature. This also gives rise to low T0 values ~60 K close to room temperature, similar to that for InGaAsP/InP
We report the first demonstration of CW operation of GaAsP/GaAs/GaAsSb QW lasers above room temperatures and show that the strain compensation improves the overall device performance
Room-temperature continuous wave operation of antimonide-based long wavelength VCSELs is reported. Power outputs up to 200 muW and wavelengths up to 1290 nm are achieved, making them suitable for optical data-communications applications
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.