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The half-bridge (HB) LLC converter has been widely used in medium power applications because of low component count, no transformer dc-offset current, and wide zero-voltage-switching (ZVS) range. However, the HB LLC converter should be designed with small transformer magnetizing inductance to obtain high voltage gain in wide-input-voltage applications with the hold-up time conditions. It causes the...
Defect engineering is carried out to determine optimum growth conditions for highly reliable high-power 780 nm AlGaAs laser diodes (LDs) using deep level transient spectroscopy (DLTS). The DLTS results reveal that the defect density of the Al0.48Ga0.52As cladding layer depended heavily on growth temperature and AsH3 flow but that of the Al0.1Ga0.9As active layer depended mostly on the growth rates...
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