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Abstract. A novel simple method of crystallization of hydrogenated amorphous silicon (a-Si:H) thin films is described. Namely, we studied a metal-induced crystallization enhanced by a dc electric field in sandwich p+in+structures. The samples were fabricated from wide-bandgap a-Si:H with high hydrogen content (1351at.% H). Macroscopic islands of a-Si:H (up to 1mm in diameter) in the region between...
Abstract: Silicon nanocrystals were prepared by Si+-ion implantation and subsequent annealing of SiO2 films thermally grown on a c-Si wafer. Different implantation energies (20-150 keV) and doses - cm-2) were used in order to achieve flat implantation profiles (through the thickness of about 100 nm) with a peak concentration of Si atoms of 5, 7, 10 and 15 atomic%. The presence of Si nanocrystals...
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