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Ferroelectric HfZrOx (FE-HZO) FETs is experimentally demonstrated with 0.98nm CET (capacitance equivalent thickness), small hysteresis window VT (threshold voltage) shift < 0.1V, SSfor = 42mV/dec, SSrev = 28mV/dec, and switch-off < 0.2V. The optimum ALD process leads single monolayer SiOx for IL (interfacial layer) and low gate leakage current. The FE-HZO FETs is operated at room temperature...
Polycrystalline BiFeO3 (BFO) and (Gd, Mn) co-doped BiFeO3 (BGFMO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. Formation of rhombohedrally distorted perovskite crystal structure for the BFO and the BGFMO thin films was confirmed by an x-ray diffraction and a Raman analysis. Improved ferroelectric properties were observed from the BGFMO compared...
Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or...
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