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High stresses generated from chip-package interactions (CPI), especially when large die is flip mounted on organic substrate using Pb-free C4 bumps, can easily cause low-k delamination. A novel scheme by applying an elastic material can effectively reduce the transmitted stresses and, thus, resolve the interfacial delamination issue. Along with an optimized chip-package integration solution, a reliable...
Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or...
A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this dasiadynamic resistancepsila (Rd) is inversely related to the programming current (I), as Rd = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective...
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