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A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is introduced by carefully investigating the utility of III–V semiconductor quantum dots as infrared photodetectors at a wavelength of 1.2–1.5 μm. We not only present a detailed description of the simulation methodology coupled to the atomistic sp 3 d 5 s ∗ tight-binding band model, but also...
Metallic property and Ohmic conduction in densely phosphorus δ-doping ultra-thin silicon nanowires (Si:P NWs) are studied. A 10-band sp3 d5 s∗ tight-binding approach is used to describe device electronic structures atomistically. Electrostatics at equilibrium are self-consistently calculated with our in-house 3-D parallel Schrödinger-Poisson solver that is coupled to the Local Density Approximation...
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