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Deep trench structures have been widely introduced to the IC and MEMS devices, such as bottle trench structures with an aspect-ratio of more than 50:1 has been adopted to form the capacitors on DRAM. The fabrication of this kind of structures challenges the traditional surface profile and shallow trench measurement technology. A polarized Fourier-transform infrared (FTIR) reflectance spectrometry...
Model-based infrared (MBIR) reflectance spectrometry has been introduced for characterization of the depth and profile of deep trench structures in dynamic random access memory (DRAM). Modeling the complex trench structure as a multilayer optical film stack with effective medium approximation (EMA) allows the determination of both trench depth and width from Fourier-transfer infrared (FTIR) reflectance...
This paper proposes a nondestructive technique for measuring deep trench structures of DRAM using infrared reflectance spectrometry. By processing layered-film optical model equivalents of various trench array structures with effective medium theory, the reflectance spectra of optical models are accurately simulated with Fresnel's reflection equations, and the relationships between modeled spectra...
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