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The effect of annealing on the 3.31 eV (A line) emission in ZnO nanorods is studied in detail by temperature-dependent photoluminescence (PL). Annealing results in obvious changes in peak energy and lineshape of the A line, indicating different luminescence origin in the as-grown and annealed ZnO nanorods. In the as-grown nanorods, the A line is a result of competition between free-to-neutral acceptor...
The effects of annealing temperature on excitonic emissions from Na + ion implanted ZnO nanorods are studied and annealing between 600 and 800°C can effectively repair the implantation as evidenced by the enhanced excitonic emissions. A well-resolved bound exciton line at 3.352eV with a linewidth of ∼2meV emerges from 800°C annealed sample and could be related to the formation of Na Zn...
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