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Ge n- and p-FinFETs with different interfacial layer ferroelectric HfZrOx (IL-FE-HZO) gate stacks have been demonstrated systematically by various annealing conditions for the first time. Microwave annealing (MWA) not only shows enhanced FE characteristics but also suppresses the gate leakage and Ge interdiffusion compared with conventional rapid thermal annealing (RTA). While HZO on Al2O3 IL results...
In this paper, strain effects on silicon n-channel gate-all-around (GAA) jucntionless field effect transistor (JLFET) are studied. By using tensile strain SiN layer, drive currents of the JLFETs show enhancement of up to 42%. The high performance strained JLFETs exhibit superior gate control (Ion/Ioff >109) and ideal S.S. (65 mV/dec.) as a channel width scales down to 20 nm. Drive currents and...
In this work, for the first time, we propose and demonstrate an implant-free gate-all-around (GAA) low-temperature poly-Si (LTPS) nanowire (NW) device with Al2O3 dielectric and TiN gate. Since the channel and source/drain (S/D) regions are sharing one in-situ phosphorous-doped poly-Si material, the process cost could be efficiently reduced. Such novel scheme appears to be promising for both system-on-panel...
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