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In this brief, we propose a new extended-p+ stepped gate (ESG) thin-film silicon-on-insulator laterally double-diffused metal-oxide-semiconductor (LDMOS) with an extended-p+ region beneath the source and a stepped gate structure in the drift region of the LDMOS. The hole current generated due to impact ionization is now collected from an n+- p+ junction instead of an n+-p junction, thus delaying the...
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