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In this paper, we have studied the effect of localized charges on the threshold voltage of a Gate All Around Nanowire TFET and a two dimensional (2D) analytical model is developed for studying these effects. These localized charges are generated in the oxide due to hot carrier effects (HCEs) arising due to high electric fields in the tunneling region of a TFET. The models are derived by dividing the...
In this work, a numerical study is carried out on the effects of localized charges on the threshold voltage of a Tunneling Field Effect Transistor (TFET) using 2D TCAD simulations. The localized charges can be generated at the Si-SiO2 interface by hot carrier effects arising due to high electric fields in the tunneling region of a TFET. The study is carried out with both positive and negative interface...
In this paper, we have developed a 2-D analytical model for the surface potential and threshold voltage of a tunneling field-effect transistor (TFET) with localized charges in the oxide. These charges are generated in the oxide due to hot carrier effects in the channel. The models are derived by dividing the channel into damaged and undamaged regions and then solving the 2-D Poisson’s equation in...
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