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The repeatability of set/reset errors has been investigated in 40nm TaOx based ReRAM cells. Errors of the Low Resistance State (LRS) in specific cells are observed repeatedly, and such cells are recovered by DC read operation. When error cells are recovered, the LRS cell current of the recovered cells shows a sudden jump up to large cell current in certain set cycles. Then, the High Resistance State...
Data-retention characteristics of 3-dimensional (3D) NAND flash memory have been evaluated with the optimal Vref (read reference voltage) shift in comparison with 2-dimentional (2D) (1Xnm) NAND flash memory. Bit-error rate (BER) of data-retention and write/erase (W/E) cycling in 3D NAND flash are much smaller than that in 2D NAND flash. Also, in 3D NAND flash, BER of Bottom Word-line is 1.9-times...
This paper proposes a new method to predict the data-retention time of long-term archive SSD with flexible-wLC NAND flash. This paper first reports that the conventional prediction overestimates the data lifetime based on the long-term data retention measurement. Then, a more precise prediction is proposed. By using this proposal, the most reliable and lowest cost memory architecture is determined...
Recently, a new right, the “Right to be forgotten”, has been defined for privacy protection. One approach to protect personal information is to control the data's lifetime or expiration. Here, a privacy-protection solid-state storage (PP-SSS) system is proposed, in which personal data is automatically invalidated within the hardware itself. In the proposed data-lifetime management (DLM) scheme, the...
Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.
Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.
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