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A 3.5 GHz low insertion loss variation phase shifter has been designed and fabricated on standard 0.18‐μm CMOS process. To achieve over 360° continuously phase tuning range, the phase shifter consists of a switch type phase shifter (STPS) and a reflection type phase shifter (RTPS). The phase‐invertible variable attenuator (PIVA) topology which can provide two states with 180° phase‐shift while maintaining...
A 37–40 GHz power amplifier (PA) has been designed and fabricated on 0.1-μm GaAs pHEMT process. Utilizing two-way direct shunt power combining and low impedance transmission line pre-matching technique, the PA achieves measured saturation output power of 25.6 dBm with peak power added efficiency (PAE) of 28% at 38 GHz. The measured output 1-dB gain compression point is 24.6 dBm and the peak gain is...
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