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In this paper, an empirical truncated balanced realization (TBR) approach is introduced to reduce the model order of non-quasi-static (NQS) effects in MOSFETs. In the PSP model (an industrial standard in compact modeling of MOSFETs), a simple spline-collocation (SC) approach is most commonly used to compute NQS. The SC technique, however, suffers from relatively high computing effort. To the best...
The excessive interconnection delay and fast increasing development cost, as well as complexity of the single-chip integration of different technologies, are likely to become the major stumbling blocks for the success of monolithic system-on-chips. To address the above problems, this paper investigates a new VLSI integration paradigm, the so-called 2.5-dimensional (2.5-D) integration scheme. Using...
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