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This paper covers characterization and gate drive design for high voltage, gallium nitride (GaN), high electron-mobility transistors (HEMT) in a cascode structure. Parameters of high voltage cascode GaN HEMT devices are described and compared to state-of-the-art Si MOSFET devices. Challenges in designing high frequency GaN based power converter and common design practices are described. Effects of...
This paper analyzes application of a matrix transformer structure in high frequency LLC resonant converter. Soft-switching condition for primary switches has been derived considering the parasitic capacitance of elements in resonant circuit. A comparison is made between characteristics of cascade GaN and state-of-the-art Si switching devices and its effect on the value of resonant current. The concept...
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