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With the continued scaling of semiconductor devices, controlling contact resistance becomes more and more challenging. Selenium (Se) ion implantation is noted in the literatures to effectively reduce contact resistance in NMOS transistors by lowering the electron Schottky barrier height (SBH). A suitable selenium source feed material is required and can be in solid form, such as selenium oxide (e...
Beamline implant productivity challenges associated with high dose p-type boron doping have been well documented. Recently, BF3/H2 mixtures were shown to be an effective alternative to BF3 in enabling implant tool productivity improvements through the extension of ion source life - which is accomplished with hydrogen's ability to interrupt the halogen cycle that otherwise is responsible for depositing...
In the manufacturing process of advanced node semiconductor devices, germanium tetrafluoride (GeF4) gas is used for pre-amorphization implantation (PAI) of the silicon crystal structure. This germanium implant is required for controlling channeling and reducing Transient Enhanced Diffusion (TED) for better ultra-shallow junction formation. Fluoride gases, including GeF4, have a long history of poor...
Co-implantation of impurities such as carbon (C) has been proven to effectively reduce Transient Enhanced Diffusion (TED) of boron during annealing, enabling the formation of high-quality ultra-shallow junctions - a requirement for advanced-node semiconductor devices. Carbon dioxide (CO2) is traditionally used as the feed gas in implant tools for carbon implantation. Recently, carbon monoxide (CO)...
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