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The area, temperature (160–300 K), and bias polarity dependences of the I–V curves of the self-rectifying n+Si-HfO2–Ni resistance random access memory (RRAM) have been measured systematically. The complementary nonrectifying p+Si-HfO2–Ni RRAM I–V data are also provided for reference. To explain all experimental data, three resistances in series in the RRAM device: 1) the Si-HfO2 contact resistance...
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